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[選]參考段落： 如試譯文
[選]試 譯 文：
1. Fig. 1(a) presents a typical empty-state STM image obtained after RT
deposition of submonolayer Co onto the Ag/Ge(111)-√3×√3 surface, followed
by annealing at 670 K. The picture reveals the 2×2 islands in coexistence
with those with the √13×√13 reconstruction. In the inter-island area a
defect-free √3×√3 surface structure is fully conserved indicating that no
chemical interaction between the deposits and the surface takes place.
2. Ge, as the semiconductor, has promising property for microelectronic
technology[], because the characters of Ge doped with Mn can be controlled
through a small voltage. Ge(111)-c2×8 is the most thermally stable
structure for Ge, thus, we choose Ge(111) surface as the semiconductor
substrate. Co is the ferromagnetic d-transition metal due to the high
magnetization of Co at room temperature.
[選]其他事項：可議價
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